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Volumn , Issue , 2002, Pages 228-231

An improved model for high-frequency noise in BJTs and HBTs interpolating between the quasi-thermal approach and the correlated-shot-noise model

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR INTEGRATED CIRCUITS; COMPUTER SIMULATION; HETEROJUNCTION BIPOLAR TRANSISTORS; LEAST SQUARES APPROXIMATIONS; SEMICONDUCTOR DOPING; THERMODYNAMICS;

EID: 0036442259     PISSN: 10889299     EISSN: None     Source Type: Journal    
DOI: 10.1109/BIPOL.2002.1042924     Document Type: Article
Times cited : (10)

References (10)
  • 1
    • 0029408179 scopus 로고
    • High-frequency noise of bipolar devices in consideration of carrier heating and low temperature effects
    • F. Herzel and B. Heinemann, "High-Frequency Noise of Bipolar Devices in Consideration of Carrier Heating and Low Temperature Effects," Solid-St. Electron., vol. 38, pp. 1905-1909, 1995.
    • (1995) Solid-St. Electron. , vol.38 , pp. 1905-1909
    • Herzel, F.1    Heinemann, B.2
  • 2
    • 0031102366 scopus 로고    scopus 로고
    • Experimental verification and numerical application of the thermodynamic approach to high-frequency noise in SiGe HBTs
    • F. Herzel, P. Schley, B. Heinemann, U. Zillmann, D. Knoll, D. Temmler, and U. Erben, "Experimental Verification and Numerical Application of the Thermodynamic Approach to High-Frequency Noise in SiGe HBTs," Solid-St. Electron., vol. 41, pp. 387-390, 1997.
    • (1997) Solid-St. Electron. , vol.41 , pp. 387-390
    • Herzel, F.1    Schley, P.2    Heinemann, B.3    Zillmann, U.4    Knoll, D.5    Temmler, D.6    Erben, U.7
  • 6
    • 0035172751 scopus 로고    scopus 로고
    • RF noise models for bipolar transistors-A critical comparison
    • K. Aufinger and M. Reisch, "RF Noise Models for Bipolar Transistors-a Critical Comparison," IEEE BCTM, Digest of papers, 2001, pp. 110-113.
    • (2001) IEEE BCTM, Digest of papers , pp. 110-113
    • Aufinger, K.1    Reisch, M.2
  • 7
    • 0035715684 scopus 로고    scopus 로고
    • Hierarchical 2D RF noise simulation of Si and SiGe devices by Langevin-type DD and HD models based on MC generated noise parameters
    • Washington
    • C. Jungemann, B. Neinhüs, S. Decker, and B. Meinerzhagen, "Hierarchical 2D RF noise simulation of Si and SiGe devices by Langevin-type DD and HD models based on MC generated noise parameters," in IEDM Tech. Dig., Washington, pp. 481-484, 2001.
    • (2001) IEDM Tech. Dig. , pp. 481-484
    • Jungemann, C.1    Neinhüs, B.2    Decker, S.3    Meinerzhagen, B.4
  • 8
    • 0021483118 scopus 로고
    • Accurate expression for the noise temperature of common emitter microwave transistors
    • Sep
    • A. van der Ziel and G. Bosman, "Accurate Expression for the Noise Temperature of Common Emitter Microwave Transistors," IEEE Trans. Electron Devices, vol. 31, pp. 1280-1283, Sep. 1984.
    • (1984) IEEE Trans. Electron Devices , vol.31 , pp. 1280-1283
    • Van der Ziel, A.1    Bosman, G.2
  • 9
    • 0036494365 scopus 로고    scopus 로고
    • The effects of geometrical scaling on the frequency response and noise performance of SiGe HBTs
    • Mar
    • S. Zhang, G. Niu, J.D. Cressler, A.J. Joseph, G. Freeman, and D.L. Harame "The Effects of Geometrical Scaling on the Frequency Response and Noise Performance of SiGe HBTs," IEEE Trans. Electron Devices, vol. 49, pp. 429-435, Mar. 2002.
    • (2002) IEEE Trans. Electron Devices , vol.49 , pp. 429-435
    • Zhang, S.1    Niu, G.2    Cressler, J.D.3    Joseph, A.J.4    Freeman, G.5    Harame, D.L.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.