-
1
-
-
0029408179
-
High-frequency noise of bipolar devices in consideration of carrier heating and low temperature effects
-
F. Herzel and B. Heinemann, "High-Frequency Noise of Bipolar Devices in Consideration of Carrier Heating and Low Temperature Effects," Solid-St. Electron., vol. 38, pp. 1905-1909, 1995.
-
(1995)
Solid-St. Electron.
, vol.38
, pp. 1905-1909
-
-
Herzel, F.1
Heinemann, B.2
-
2
-
-
0031102366
-
Experimental verification and numerical application of the thermodynamic approach to high-frequency noise in SiGe HBTs
-
F. Herzel, P. Schley, B. Heinemann, U. Zillmann, D. Knoll, D. Temmler, and U. Erben, "Experimental Verification and Numerical Application of the Thermodynamic Approach to High-Frequency Noise in SiGe HBTs," Solid-St. Electron., vol. 41, pp. 387-390, 1997.
-
(1997)
Solid-St. Electron.
, vol.41
, pp. 387-390
-
-
Herzel, F.1
Schley, P.2
Heinemann, B.3
Zillmann, U.4
Knoll, D.5
Temmler, D.6
Erben, U.7
-
3
-
-
0033169537
-
Noise parameter optimization of UHV/CVD SiGe HBT's for RF and microwave applications
-
Aug
-
G. Niu, W.E. Ansley, S. Zhang, J.D. Cressler, C.S. Webster, and R.A. Groves, "Noise Parameter Optimization of UHV/CVD SiGe HBT's for RF and Microwave Applications," IEEE Trans. Electron Devices, vol. 46, pp. 1589-1598, Aug. 1999.
-
(1999)
IEEE Trans. Electron Devices
, vol.46
, pp. 1589-1598
-
-
Niu, G.1
Ansley, W.E.2
Zhang, S.3
Cressler, J.D.4
Webster, C.S.5
Groves, R.A.6
-
4
-
-
0035506234
-
A unified approach to RF and microwave noise parameter modeling in bipolar transistors
-
Nov
-
G. Niu, J.D. Cressler, S. Zhang, W.E. Ansley, C.S. Webster, and D.L. Harame, "A Unified Approach to RF and Microwave Noise Parameter Modeling in Bipolar Transistors," IEEE Trans. Electron Devices, vol. 48, pp. 2568-2574, Nov. 2001.
-
(2001)
IEEE Trans. Electron Devices
, vol.48
, pp. 2568-2574
-
-
Niu, G.1
Cressler, J.D.2
Zhang, S.3
Ansley, W.E.4
Webster, C.S.5
Harame, D.L.6
-
5
-
-
0031236647
-
A scalable high-frequency noise model for bipolar transistors with application to optimal transistor sizing for low-noise amplifier design
-
Sep
-
S.P. Voinigescu, M.C. Maliepaard, J.L. Showell, G.E. Babcock, D. Marchesan, M. Schroter, P. Schvan, and D.L. Harame, "A Scalable High-Frequency Noise Model for Bipolar Transistors with Application to Optimal Transistor Sizing for Low-Noise Amplifier Design," IEEE J. Solid-State Circuits, vol. 32, pp. 1430-1438, Sep. 1997.
-
(1997)
IEEE J. Solid-State Circuits
, vol.32
, pp. 1430-1438
-
-
Voinigescu, S.P.1
Maliepaard, M.C.2
Showell, J.L.3
Babcock, G.E.4
Marchesan, D.5
Schroter, M.6
Schvan, P.7
Harame, D.L.8
-
6
-
-
0035172751
-
RF noise models for bipolar transistors-A critical comparison
-
K. Aufinger and M. Reisch, "RF Noise Models for Bipolar Transistors-a Critical Comparison," IEEE BCTM, Digest of papers, 2001, pp. 110-113.
-
(2001)
IEEE BCTM, Digest of papers
, pp. 110-113
-
-
Aufinger, K.1
Reisch, M.2
-
7
-
-
0035715684
-
Hierarchical 2D RF noise simulation of Si and SiGe devices by Langevin-type DD and HD models based on MC generated noise parameters
-
Washington
-
C. Jungemann, B. Neinhüs, S. Decker, and B. Meinerzhagen, "Hierarchical 2D RF noise simulation of Si and SiGe devices by Langevin-type DD and HD models based on MC generated noise parameters," in IEDM Tech. Dig., Washington, pp. 481-484, 2001.
-
(2001)
IEDM Tech. Dig.
, pp. 481-484
-
-
Jungemann, C.1
Neinhüs, B.2
Decker, S.3
Meinerzhagen, B.4
-
8
-
-
0021483118
-
Accurate expression for the noise temperature of common emitter microwave transistors
-
Sep
-
A. van der Ziel and G. Bosman, "Accurate Expression for the Noise Temperature of Common Emitter Microwave Transistors," IEEE Trans. Electron Devices, vol. 31, pp. 1280-1283, Sep. 1984.
-
(1984)
IEEE Trans. Electron Devices
, vol.31
, pp. 1280-1283
-
-
Van der Ziel, A.1
Bosman, G.2
-
9
-
-
0036494365
-
The effects of geometrical scaling on the frequency response and noise performance of SiGe HBTs
-
Mar
-
S. Zhang, G. Niu, J.D. Cressler, A.J. Joseph, G. Freeman, and D.L. Harame "The Effects of Geometrical Scaling on the Frequency Response and Noise Performance of SiGe HBTs," IEEE Trans. Electron Devices, vol. 49, pp. 429-435, Mar. 2002.
-
(2002)
IEEE Trans. Electron Devices
, vol.49
, pp. 429-435
-
-
Zhang, S.1
Niu, G.2
Cressler, J.D.3
Joseph, A.J.4
Freeman, G.5
Harame, D.L.6
-
10
-
-
0033345513
-
Modular integration of high-performance SiGe:C HBTs in a deep submicron, epi-free CMOS process
-
Dec
-
K.E. Ehwald, D. Knoll, B. Heinemann, K. Chang, J. Kirchgessner, R. Mauntel, I.S. Lim, J. Steele, P. Schley, B. Tillack, A. Wolff, K. Blum, W. Winkler, M. Pierschel, U. Jagdhold, R. Barth, T. Grabolla, H.J. Erzgräber, B. Hunger, and H.J. Osten, "Modular Integration of High-Performance SiGe:C HBTs in a Deep Submicron, Epi-Free CMOS Process," in Proc. of the IEDM'99, Washington, Dec. 1999, pp. 561-564.
-
(1999)
Proc. of the IEDM'99, Washington
, pp. 561-564
-
-
Ehwald, K.E.1
Knoll, D.2
Heinemann, B.3
Chang, K.4
Kirchgessner, J.5
Mauntel, R.6
Lim, I.S.7
Steele, J.8
Schley, P.9
Tillack, B.10
Wolff, A.11
Blum, K.12
Winkler, W.13
Pierschel, M.14
Jagdhold, U.15
Barth, R.16
Grabolla, T.17
Erzgräber, H.J.18
Hunger, B.19
Osten, H.J.20
more..
|