An examination of bipolar transistor noise modeling and noise physics using microscopic noise simulation

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Volumn , Issue , 2003, Pages 225-228

  Cui, Yan ^a   Niu, Guofu ^a   Harame, David L ^b  

^a AUBURN UNIVERSITY   (United States)

^b IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER AIDED DESIGN; ELECTRIC CURRENTS; ELECTRIC NETWORK ANALYSIS; ELECTRIC POTENTIAL; ELECTRONS; MATRIX ALGEBRA; SPURIOUS SIGNAL NOISE; THERMAL NOISE;

BIPOLAR TRANSISTOR NOISE MODELING; MACROSCOPIC INPUT NOISE; MICROSCOPIC NOISE SIMULATION; NOISE PHYSICS;

BIPOLAR TRANSISTORS;

EID: 1042289131     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. G.F. Niu et al., IEEE Trans. Elec. Dev., vol. 48, no. 11, pp. 2568-2574, 2001.
2. W. Shockley et al., Quantum Theory of Atoms, Molecules, and the Solid-State, Academic Press, pp. 537-563, 1966.
3. Y. Cui et al., Digest of IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, pp. 170-173, 2003.
4. F. Bonani et al., IEEE Trans. Elec. Dev., vol. 45, no. 1, pp. 261-269, 1998.
5. D.L. Harame et al., IEEE Trans. Elec. Dev., vol. 42, no. 3, pp. 469-482, 1995.
6. H.A. Haus et al., Proc. IRE, vol. 48, pp. 69-74, 1960.