Dimension scaling of 1/f noise in the base current of quasiself-aligned polysilicon emitter bipolar junction transistors

Journal of Applied Physics

Volumn 82, Issue 5, 1997, Pages 2671-2675

  Llinares, P ^a,c   Celi, D ^a   Roux dit Buisson, O ^a   Ghibaudo, G ^b   Chroboczek, J A ^c  

^a STMICROELECTRONICS   (Italy)

^b Grenoble INP Phelma   (France)

^c ORANGE LABS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000109768     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366082     Document Type: Article

References (22)

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