Transistor noise in SiGe HBT RF technology

IEEE Journal of Solid-State Circuits

Volumn 36, Issue 9, 2001, Pages 1424-1427

  Niu, G ^a   Jin, Z ^a   Cressler, J D ^a   Rapeta, R ^a   Joseph, A J ^a   Harame, D ^a  

^a AUBURN UNIVERSITY   (United States)

Author keywords

Bipolar technology; Flicker noise; Modeling; Phase noise; RF circuits; RF noise; SiGe HBT

Indexed keywords

COMPUTER SIMULATION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SPURIOUS SIGNAL NOISE; THERMODYNAMIC STABILITY;

TRANSISTOR NOISE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0035445609     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/4.944672     Document Type: Article

References (8)

1. Low-power radio frequency IC's for portable communications
2. SiGe profile design tradeoffs for RF circuit applications
3. Noise modeling and SiGe profile design tradeoffs for RF applications
4. Integration and design issues in combining very-high-speed silicon-germanium bipolar transistors and ULSI CMOS for system-on-a-chip applications
5. Noise parameter optimization of UHV/CVD SiGe HBT's for RF and microwave applications
6. Transistor noise in SiGe HBT RF technology
7. A simple model of feedback oscillator noise spectrum