Hierarchical 2-D DD and HD noise simulations of Si and SiGe devices - Part I: Theory

IEEE Transactions on Electron Devices

Volumn 49, Issue 7, 2002, Pages 1250-1257

  Jungemann, Christoph ^a,b   Neinhüs, Burkhard ^b   Meinerzhagen, Bernd ^a,b  

^a IEEE   (Germany)

^b UNIVERSITY OF BREMEN   (Germany)

Author keywords

Device simulation; Monte Carlo; Noise; Silicon

Indexed keywords

DRIFT DIFFUSION NOISE MODELS; HYDRODYNAMIC NOISE MODEL; LANGEVIN BOLTZMANN EQUATION; LANGEVIN FORCE; SILICON GERMANIUM;

BAND STRUCTURE; COMPUTER SIMULATION; CRYSTAL ORIENTATION; DIFFUSION; ELECTROHYDRODYNAMICS; ELECTRON TRANSPORT PROPERTIES; HETEROJUNCTION BIPOLAR TRANSISTORS; MONTE CARLO METHODS; SEMICONDUCTOR DEVICE MODELS; SPURIOUS SIGNAL NOISE; TABLE LOOKUP; TWO DIMENSIONAL;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0036637849     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2002.1013283     Document Type: Article

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