Low-frequency noise in UHV/CVD epitaxial Si and SiGe bipolar transistors

IEEE Journal of Solid-State Circuits

Volumn 31, Issue 10, 1996, Pages 1458-1466

  Vempati, Lakshmi S ^{a,b,c,e,f,g,h}   Cressler, John D ^a,b   Babcock, Jeffrey A ^b   Jaeger, Richard C ^a,b   Harame, David L ^a,d  

^a IEEE

^b AUBURN UNIVERSITY   (United States)

^c DELPHI CORPORATION   (United States)

^d IBM MICROELECTRONICS   (United States)

^e NATIONAL INSTITUTE OF TECHNOLOGY CALICUT   (India)

^f AUBURN UNIVERSITY   (United States)

^g GENERAL MOTORS CORPORATION   (United States)

^h Rapid Design Service Inc

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; ION IMPLANTATION; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SPURIOUS SIGNAL NOISE;

BIPOLAR JUNCTION TRANSISTOR; GENERATION RECOMBINATION NOISE; RANDOM TELEGRAPH SIGNAL NOISE; ULTRAHIGH VACUUM CHEMICAL VAPOR DEPOSITION;

BIPOLAR TRANSISTORS;

EID: 0030270208     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/4.540056     Document Type: Article

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