On the potential of SiGe HBTs for extreme environment electronics

Proceedings of the IEEE

Volumn 93, Issue 9, 2005, Pages 1559-1582

  Cressler, John D ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Cryogenic temperatures; Extreme environments; High temperatures; Radiation; Silicon germanium (SiGe); Silicon germanium heterojunction bipolar transistor (SiGe HBT)

Indexed keywords

COSTS; ELECTRONICS ENGINEERING; HIGH TEMPERATURE EFFECTS; INTEGRATED CIRCUITS; LOW TEMPERATURE EFFECTS; MARKETING; RADIATION; SEMICONDUCTING SILICON COMPOUNDS; SPECIFICATIONS;

CRYOGENIC TEMPERATURES; EXTREME ENVIRONMENTS; HIGH TEMPERATURES; SILICON-GERMANIUM (SIGE); SILICON-GERMANIUM HETEROJUNCTION BIPOLAR TRANSISTORS (SIGE HBT);

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 24944489135     PISSN: 00189219     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPROC.2005.852225     Document Type: Conference Paper

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