Reliability and performance scaling of very high speed SiGe HBTs

Microelectronics Reliability

Volumn 44, Issue 3, 2004, Pages 397-410

  Freeman, Greg ^a   Rieh, Jae Sung ^a   Yang, Zhijian ^a   Guarin, Fernando ^a  

^a IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL STRUCTURE; CURRENT DENSITY; ELECTRIC POTENTIAL; INTEGRATED CIRCUIT LAYOUT; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; POLYSILICON; RELIABILITY; SEMICONDUCTING SILICON COMPOUNDS; SINGLE CRYSTALS;

AVALANCHE CURRENTS; DEVICE FAILURE MECHANISMS; THERMAL OXIDATION;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 1142288213     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2003.11.003     Document Type: Article

References (36)

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