Si/Si1-x-yGexCy/Si heterojunction bipolar transistors

IEEE Electron Device Letters

Volumn 17, Issue 7, 1996, Pages 334-337

  Lanzerotti, L D ^a,d   St Amour, A ^a,d   Liu, C W ^a,b   Sturm, J C ^a,d   Watanabe, J K ^c   Theodore, N D ^c  

^a Princeton University   (United States)

^b NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

^c MOTOROLA INC   (United States)

^d IEEE

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; CHEMICAL VAPOR DEPOSITION; ELECTRIC VARIABLES MEASUREMENT; ENERGY GAP; ION IMPLANTATION; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; THERMAL EFFECTS; THIN FILMS; X RAY CRYSTALLOGRAPHY;

ELECTRICAL BANDGAP MEASUREMENTS; GERMANIUM FRACTIONS; RAPID THERMAL CHEMICAL VAPOR DEPOSITION;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0030181659     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.506359     Document Type: Article

References (17)

1. y alloy system," Appl. Phys., vol. 60, no. 24, pp. 3033-3035, 1992.
2. y epitaxial layers," Mater, Lett., vol. 18, pp. 57-60, 1993.
3. S. Im, J. Washburn, R. Gronsky, N. W. Cheung, K. M. Yu, and J. W. Ager, "Optimization of Ge/C ratio for compensation of misfit strain in solid phase epitaxial growth of SiGe layers," Appl. Phys. Lett., vol 63, no. 19, pp. 2682-2684, 1993.
4. x by rapid thermal chemical vapor deposition and application to heterojunction bipolar transistors," J. Voc. Sci. Technol. B, vol. 9, no. 4, p. 2011-2016, 1991.
5. E. Kasper, A. Gruhle, and H. Kibbel, "High speed SiGe-HBT with very low base sheet resistivity," IEDM Tech. Dig., pp. 79-81, 1993.
6. E. J. Prinz and J. C. Sturm, "Current gain-Early voltage products in heterojunction bipolar transistors with nonuniform base bandgaps," IEEE Elestron Device Lett., vol. 12, no. 12, pp. 661-663, 1991.
7. x/Si heterojunction bopolar transistors," IEDM Tech. Dig., pp. 853-856, 1991.
8. x/Si heterojunction bipolar transistors," IEEE Trans. Electron Devices, vol. 36, no. 10, pp. 2093-2104, 1989.
9. H. Kroemer, "Heterotructure bipolar transistors and integrated circuits," Proc. IEEE, vol. 70, no. 1, pp. 13-25, 1982.
10. x/Si heterojunction bipolar transistors," IEEE Electron Device Lett., vol. 12, no. 2, pp. 42-44, 1991.
11. J. W. Slocboom, G. Streutker, A. Pruijmboom, and D. J. Gravesteijn, "Parasitic energy barriers in SiGe HBT's," IEEE Electron Device Lett., vol. 12. no. 9, pp. 486-488, 1991.
12. C G. Van de Walle and R. M. Martin, "Theoretical calculation of heterojunction discontinuities in the Si/Ge system," Phys. Rev. B, vol. 34, no. 8-II, pp. 5621-5634, 1986.
13. y/Si heterojunction bipolar transistors," IEDM Tech. Dig., pp. 930-932. 1994.
14. y alloy layers on Si(100)," Appl. Phys. Lett., vol. 67, pp. 3915-3917, 1995.
15. y alloys," Appl. Phys. Lett., vol. 64, no. 7, pp. 875-877, 1994.
16. y layers," Superlatt. Microstruct., vol. 16, no. 2, p. 121-124, 1994.
17. A. A. Demkov and O. F. Sankey, "Theoretical investigation of random Si-C alloys," Phys. Rev. B, vol. 48, no. 4, p. 2207-2214, 1993.