1/f noise in proton-irradiated SiGe HBTs

IEEE Transactions on Nuclear Science

Volumn 48, Issue 6 I, 2001, Pages 2244-2249

  Jin, Zhenrong ^b   Niu, Guofu ^a,b   Cressler, John D ^a,b   Marshall, Cheryl J ^a,c   Marshall, Paul W ^a,c   Kim, Hak S ^a,d   Reed, Robert A ^a,c   Harame, David L ^e  

^a IEEE

^b AUBURN UNIVERSITY   (United States)

^c NASA GODDARD SPACE FLIGHT CENTER   (United States)

^d Jackson and Tull Chartered Engineers   (United States)

^e IBM MICROELECTRONICS   (United States)

Author keywords

1 f noise; Proton irradiation; SiGe heterojunction bipolar transistor (HBT)

Indexed keywords

CHEMICAL VAPOR DEPOSITION; PROTON IRRADIATION; SEMICONDUCTING SILICON COMPOUNDS; SPURIOUS SIGNAL NOISE;

NOISE DEGRADATION;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0035722928     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.983203     Document Type: Conference Paper

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