Single event upset test results on a prescalar fabricated in IBM's 5HP silicon germanium heterojunction bipolar transistors BiCMOS technology

IEEE Radiation Effects Data Workshop

Volumn , Issue , 2001, Pages 172-176

  Reed, R A ^a   Marshall, P W ^a   Ainspan, H ^a   Marshall, C J ^a   Kim, H S ^a   Cressler, J D ^a   Niu, G ^a   LaBel, K A ^a  

^a NASA HEADQUARTERS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FLIP FLOP CIRCUITS; HEAVY IONS; HETEROJUNCTION BIPOLAR TRANSISTORS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE TESTING;

SINGLE EVENT UPSET (SEU) TESTS;

CMOS INTEGRATED CIRCUITS;

EID: 0035172651     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. The effects of proton irradiation on the lateral and vertical scaling of UHV/CVD SiGe HBT BiCMOS
2. Single event effects in circuit-hardened SiGe HBT logic at gigabit per second data rates
3. Manufacturability demonstration of an integrated SiGe HBT technology for the analog and wireless marketplace
4. A fully-integrated 5-GHz frequency synthesizer in SiGe BiCMOS