Cost-effective high-performance high-voltage SiGe:C HBTs with 100GHz fT and BVCEOx fT products exceeding 220VGHz

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2001, Pages 348-351

  Heinemann, B ^a   Knoll, D ^a   Barth, R ^a   Bolze, D ^a   Blum, K ^a   Drews, J ^a   Ehwald, K E ^a   Fischer, G G ^a   Kopke K ^a   Kruger D ^a   Kurps, R ^a   Rucker H ^a   Schley, P ^a   Winkler, W ^a   Wulf, H E ^a  

^a IHP   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; COST EFFECTIVENESS; CURRENT DENSITY; ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE;

CURRENT GAINS; DEEP TRENCH ISOLATION; EPITAXIALLY BURIED SUBCOLLECTOR; HIGH VOLTAGE DEVICES; SYSTEM ON CHIP;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 17544392503     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. Modular integration of high-performance SiGe:C HBTs in a deep submicron, epi-free CMOS process
2. Physical limitations on frequency and power parameters of transistors
3. Everything you always wanted to know about the SiGe HBT ... but were afraid to ask
4. SiGe bipolar technology for mixed digital and analogue RF applications
5. 82GHz dynamic frequency divider in 5.5ps ECL SiGe HBTs