0.13μm SiGeC BiCMOS technology

Proceedings - Electrochemical Society

Volumn 7, Issue , 2004, Pages 33-35

  Chantre, A ^a   Laurens, M ^a   Chevalier, P ^a   Monroy, A ^a   Deleglise F ^a   Fellous, C ^a   Rubaldo, L ^a   Dutartre, D ^a  

^a STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; BIPOLAR TRANSISTORS; BROADBAND NETWORKS; CMOS INTEGRATED CIRCUITS; DIGITAL SIGNAL PROCESSING; DOPING (ADDITIVES); RADAR; THERMAL CYCLING;

AUTOMOTIVE RADARS; BICMOS TECHNOLOGY; BIT-RATE OPTICAL NETWORKING; SIGE;

SILICON COMPOUNDS;

EID: 17044393987     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)

1. M. Laurens et al, BCTM Tech. Dig., p. 147 (2003)
2. P. Chevalier et al, BCTM 2004 (to be published)