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Volumn 44, Issue 5, 2000, Pages 869-873
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Equilibrium model for buried SiGe strained layers
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Author keywords
[No Author keywords available]
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Indexed keywords
EPITAXIAL GROWTH;
SEMICONDUCTING GERMANIUM;
SEMICONDUCTING SILICON;
STRAINED LAYERS;
HETEROJUNCTION BIPOLAR TRANSISTORS;
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EID: 0033885090
PISSN: 00381101
EISSN: None
Source Type: Journal
DOI: 10.1016/S0038-1101(99)00284-1 Document Type: Article |
Times cited : (21)
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References (22)
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