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Volumn 47, Issue 6 III, 2000, Pages 2521-2527

A comparison of the effects of gamma irradiation on SiGe HBT and GaAs HBT technologies

Author keywords

[No Author keywords available]

Indexed keywords

GAMMA IRRADIATION; RADIATION TOLERANT DEVICES;

EID: 0034450520     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.903802     Document Type: Conference Paper
Times cited : (42)

References (29)
  • 19
    • 0005199686 scopus 로고    scopus 로고
    • Microwave characterization and modeling of silicon-germanium heterojunction bipolar transistors
    • Ph.D. dissertation, Auburn University
    • (1998)
    • Ansley, W.E.1
  • 25
  • 29
    • 0024686339 scopus 로고
    • Deep-level impurity analysis for p-n junctions of a bipolar transistor from low frequency g-r noise measurement
    • (1989) Solid State Electronics , vol.32 , Issue.6 , pp. 439-443
    • Dai, Y.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.