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Volumn 47, Issue 6 III, 2000, Pages 2521-2527
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A comparison of the effects of gamma irradiation on SiGe HBT and GaAs HBT technologies
a,b a,b a,b a,c a,d a,e a,f a,g
a
IEEE
(United States)
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Author keywords
[No Author keywords available]
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Indexed keywords
GAMMA IRRADIATION;
RADIATION TOLERANT DEVICES;
GAMMA RAYS;
HETEROJUNCTION BIPOLAR TRANSISTORS;
IRRADIATION;
NATURAL FREQUENCIES;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTING SILICON;
RADIATION EFFECTS;
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EID: 0034450520
PISSN: 00189499
EISSN: None
Source Type: Journal
DOI: 10.1109/23.903802 Document Type: Conference Paper |
Times cited : (42)
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References (29)
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