메뉴 건너뛰기




Volumn 47, Issue 4, 2000, Pages 797-804

An electrical method for measuring the difference in bandgap across the neutral base in SiGe HBT's

Author keywords

Bandgap grading; Bipolar; Sige hbt

Indexed keywords

BANDGAP GRADING;

EID: 0033878428     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.830996     Document Type: Article
Times cited : (4)

References (24)
  • 12
    • 0031343773 scopus 로고    scopus 로고
    • in Proc. 1997 Workshop on High Performance Electron. Devices for Microwave and Optoelectronic Applications EDMO, London, U.K., 1997, pp. 267-272.
    • Y. T. Tang and J. Hamel, An electrical method for measuring bandgap grading in SiGe HBT's, in Proc. 1997 Workshop on High Performance Electron. Devices for Microwave and Optoelectronic Applications EDMO, London, U.K., 1997, pp. 267-272.
    • An Electrical Method for Measuring Bandgap Grading in SiGe HBT's
    • Tang, Y.T.1    Hamel, J.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.