Cryogenic performance of a 200 GHz SiGe HBT technology

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Volumn , Issue , 2003, Pages 171-173

  Banerjee, Bhaskar ^a   Venkataraman, Sunitha ^a   Lu, Yuan ^a   Nuttinck, Sebastien ^a   Heo, Deukhyoun ^a   Chen, Yi Jan Emery ^a   Cressler, John D ^a   Laskar, Joy ^a   Freeman, Greg ^b   Ahlgren, Dave ^b  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYOGENICS; CURRENT VOLTAGE CHARACTERISTICS; LOW TEMPERATURE TESTING; SEMICONDUCTING SILICON COMPOUNDS; SPURIOUS SIGNAL NOISE;

CRYOGENIC PERFORMANCE; SILICON GERMANIUM;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 1042277555     PISSN: 10889299     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/bipol.2003.1274960     Document Type: Conference Paper

References (8)

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4. J. Laskar et al., Micro. Journal, vol. 36, pp. 104-114, 1993.
5. S.L. Salmon et al., IEEE Transactions on Electron Devices, vol. 47, pp. 292-298, 2000.
6. J.D. Cressler et al., IEEE Electron Device Letters, vol. 15, pp. 472-474, 1994.
7. G. Niu et al., IEEE Journal of Solid-State Circuits, vol. 36, pp. 1423-1427, 2001.
8. D. Greenberg et al., IEDM Tech. Digest, pp. 787-790, 2002.