Microwave and noise performance of SiGe BiCMOS HBT under cryogenic temperatures

IEEE Electron Device Letters

Volumn 26, Issue 2, 2005, Pages 105-108

  Pruvost, S ^a,b   Delcourt, S ^a   Telliez, I ^b   Laurens, M ^b   Bourzgui, N E ^a   Danneville, F ^a   Monroy, A ^b   Dambrine, G ^a  

^a INSTITUT D ELECTRONIQUE   (France)

^b STMICROELECTRONICS   (France)

Author keywords

BiCMOS; Cryogenics; De embedding; Heterojunction bipolar transistors (HBT); Low temperature; Microwave; Millimeter waves; Noise; Small signal equivalent circuit

Indexed keywords

CMOS INTEGRATED CIRCUITS; CRYOGENICS; ELECTRIC IMPEDANCE; EQUIVALENT CIRCUITS; LOW TEMPERATURE ENGINEERING; MATHEMATICAL MODELS; MICROWAVES; MILLIMETER WAVES; PARAMETER ESTIMATION; SEMICONDUCTING SILICON COMPOUNDS; SPURIOUS SIGNAL NOISE;

CRYOGENIC TEMPERATURE; DE-EMBEDDING PROCESS; OSCILLATION FREQUENCY; SMALL SIGNAL EQUIVALENT CIRCUITS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 13444309599     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2004.841862     Document Type: Article

References (12)

1. M.R. Murti et al., "Temperature-dependent small-signal and noise parameter measurements and modeling on InP HEMTs," IEEE Trans. Microw. Theory Tech., vol. 48, no. 12, pp. 2579-2587, Dec. 2000.
2. max of 300 GHz," in Proc. IEEE RFIC Symp., Jun. 2004, pp. 395-398.
3. P. Chevalier et al., "230 GHz self-aligned SiGeC HBT for 90-nm BiCMOS technology," in IEEE BCTM Tech. Dig., Sep. 2004, pp. 225-228.
4. max 0.13 μm SiGe:C BiCMOS technology," IEEE BCTM Tech. Dig., pp. 199-202, Sep. 2003.
5. T at 77 K," Electron. Lett., vol. 36, no. 12. pp. 1236-1237, Jun. 2000.
6. B. Banerjee, S. Venkataraman, Y. Lu, S. Nuttinck, D. Heo, Y.-J. E. Chen, J. D. Cressler, J. Laskar, G. Freeman, and D. Ahlgren, "Cryogenic performance of a 200 GHz SiGe HBT technology," in IEEE BCTM Tech. Dig., Sep. 2003, pp. 171-173.
7. S. Delcourt, G. Dambrine, N. E. Bourzgui, S. Lepilliet, C. Laporte, J. P. Fraysse, and M. Maignan, "A non uniform thermal de-embedding approach for cryogenic on-wafer high frequency noise measurements," in Proc. MTT-SIMS, vol. 1, Jun. 2004, pp. 1809-1812.
8. R. J. Hawkins, "Limitations of Nielsens and related noise equations applied to microwave bipolar transistors, and a new expression for the frequency and current dependent noise figure," Solid State Electron. vol. 20, pp. 191-196, 1977,
9. M. Rudolph, R. Doerner, and P. Heymann, "Direct extraction of HBT equivalent-circuit elements," IEEE Trans. Microw. Theory Tech., vol. 47, no. 1, pp. 82-84, Jan. 1999.
10. B. Sheinman, E. Wasige, M. Rudolph, R. Doerner, V. Sidorov, S. Cohen, and D. Ritter, "A peeling algorithm for extraction of the HBT small-signal equivalent circuit," IEEE Trans. Microw. Theorv Tech. vol. 50, no. 12, pp. 2804-2810, Dec. 2002.
11. n for the Hawkins bipolar noise model," IEEE Microw. Guided Wave Lett., vol. 3, no. 2, pp. 35-37, Feb. 1993.
12. J. D. Cressler and G. Niu, Silicon-Germanium Heterojunction Bipolar Transistors, 1st ed. Norwood, MA: Artech House, 2003, p. 378, 381, 282.