Total-doseissues for microelectronics in space systems

IEEE Transactions on Nuclear Science

Volumn 43, Issue 2 PART 1, 1996, Pages 442-452

  Pease, Ronald L ^a  

^a RLP Research   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR INTEGRATED CIRCUITS; CMOS INTEGRATED CIRCUITS; ELECTRONICS PACKAGING; FAILURE ANALYSIS; IONIZATION; MICROELECTRONICS; SPACE APPLICATIONS;

COMMERCIAL OFF THE SHELF PARTS; IONIZING RADIATION; PLASTICS PACKAGING; SPACE SYSTEMS; TOTAL DOPED INDUCED FAILURE;

RADIATION EFFECTS;

EID: 0030125958     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.490892     Document Type: Article

References (43)

1. D.S. Peck, R. R. Blair, W. Brown, and F. Smits, "Surface effects of radiation on transistors," Bell Syst. Tech. J., vol. 46, p. 965, 1963.
2. H.L. Hughes and R. A. Giroux, "Space radiation affects MOS FETV Electronics, vol. 37, p. 58, 1964.
3. T.P. Ma and P. V. Dressendorfer, Ionizing Radiation Effects in MOS Devices & Circuits. New York: Wiley, 1989.
4. F. Larln, Radiation Effects in Semiconductor Devices, New York: Wiley, 1968.
5. G.C. Messenger and M. S. Ash, The Effects of Radiation on Electronic Systems. New York: Van Nostrand Reinhold, 1986.
6. A. Holmes-Siedle and L. Adams, Handbook of Radiation Effects. New York: Oxford, 1993.
7. R.L. Pease, A. H. Johnston, and J. L. Azarewicz, "Radiation testing of semiconductors for space electronics," Proc. IEEE, vol. 76, p. 11, 1988.
8. C.E. Barnes, D. M. Fleelwood, D. C. Shaw, and P. S. Winokur, "Post irradiation effects (PIE) in integrated circuits," IEEE Trans. Nucl. Sei., vol. 39, no. 3, pp. 328-341, 1992.
9. P.S. Winokiir, M. R. Shaneyfelt, T. L. Meisenheimer, and D. M. Fleetwood, "Advanced qualification techniques," IEEE Trans. Nucl. Sei, vol. 41, no. 3, pp. 538-548, 1994.
10. A. Holmes-Siedle, "Predicting end-of-life performance of microelectronics in space," Radiât. Phys. Chem., vol. 43, p. 57, 1994.
11. D.M. Fleetwood, P. S. Winokur, C. E. Barnes, and D. C. Shaw, "Accounting for time dependent effects on CMOS total dose response in space environments," Radial. Phys. Chem., vol. 43, p. 129, 1994.
12. R.L. Pease and D. R. Alexander, "Hardness assurance for space system microelectronics," Radiât. Phys. Chem., vol. 43, p. 191, 1994.
13. See, for example, IEEE NSREC Short Course Notes, 1991, 1992, 1994, and 1995.
14. P.S. Winokur, F. W. Sexton, D. M. Fleetwood, M. D. Terry, M. R. Shaneyfelt, P. V. Dressendorfer, and J. R. Schwank, "Implementing QML for radiation hardness assurance," IEEE Trans. Nucl. Sei., vol. 37, p. 1794, 1990.
15. D.R. Alexander, IEEE NSREC Short Course, Reno, NV, July 1990.
16. J.L. Titus and D. G. Platteter. "Wafer mapping of total dose failure thresholds in a bipolar recessed field oxide technology," IEEE Trans. Nucl. Sei., vol. NS-34, p. 1751, 1987.
17. J.M. Maurel, L. Villard, and L. Adams, "Characterization method of the total dose tolerance of a logic family: Application to Texas Instruments HCMOS family." in Proc. RADECS '91, 1991, pp. 220-225.
18. M.R. Shaneyfelt, P. S. Winokur, T. L. Meisenheimer, F. W. Sexton, S. B. Roeske, and M. G. Knoll, "Hardness variability in commercial technologies," IEEE Trans. Nucl. Sei., vol. 41, p. 2536, 1994.
19. J.T. Beaucour, T. Carrière, A. Gach, D. Laxague, and P. Poirot, "Total dose effects on negative voltage regulator," IEEE Trans. Nucl. Sei., vol. 41, p. 2420, 1994.
20. R. Harboe-Sorensen, R. Muller, and S. Fraenkel, "Heavy ion, proton, and Co-60 radiation evaluation of 16 Mbit DRAM memories for space application," in IEEE Radiation Effects Data Workshop Record, 1995, p. 42.
21. D.L. Shaeffer, J. R. Kimbrough, J. W. Wilburn. S. M. Demon, J. L. Kaschmitter, N. Colella, P. G. Coakley, and C. Casteneda, "Proton induced SEU, dose effects, and LEO performance predictions for R3000 microprocessors," IEEE Trans. Nucl. Sei., vol. 39, p. 2309, 1992.
22. E.W. Enlow, R. L. Pease, W. Combs, R. D. Schrimpf, and R. N. Nowlin, "Response of advanced bipolar processes to ionizing radiation," IEEE Trans. Nucl. Sei., vol. 38, p. 1342, 1991.
23. R.N. Nowlin, D. M. Fleetwood, R. D. Schrimpf, R. L. Pease, and W. E. Combs, "Hardness-assurance and testing issues for bipolar/BiCMOS devices," IEEE Trans. Nucl. Sei., vol. 40, p. 1686, 1993.
24. R.N. Nowlin, D. M. Fleelwood, and R. D. Schrimpf, "Saturation of the dose-rate response of bipolar transistors below 10 rad(SiOa)/s: Implications for hardness assurance," IEEE Trans. Nucl. Sei., vol. 41, p. 2637, 1994.
25. D.M. Schmidt, D. M. Fleetwood, R. D. Schrimpf, R. L. Pease, R. J. Graves. G. H. Johnson, K. F. Galloway, and W. E. Combs, "Comparison of ionizing radiation-induced gain degradation in lateral, substrate, and vertical PNP BJT's," IEEE Trans. Nucl. Sei, vol. 42, no. 6, p. 1541, 1995.
26. R.D. Schrimpf, R. J. Graves, D. M. Schmidt, D. M. Fleetwood, R. L. Pease, W. E. Combs, and M. DcLaus, "Hardness-assurance issues for lateral PNP bipolar junction transistors," IEEE Trans. Nucl. Sei., vol. 42, no. 6, p. 1641, 1995.
27. S. McClure, R.L. Pease, W. Will, and G. Perry. "Dependence of total dose response of bipolar linear microcircuits on applied dose rate," IEEE Trans. Nucl. Sei., vol. 41, p. 2544, 1994.
28. A.H. Johnston, G. M. Swift, and B. G. Rax, "Total dose effects in conventional bipolar transistors and linear integrated circuits," IEKE Trans. Nucl. Sei., vol. 41, p. 2427, 1994.
29. A.H. Johnston, B. G. Rax, and C. I. Lee, "Enhanced damage in linear bipolar integrated circuits at low dose rates," IEEE Trans. Nucl. Sri., vol. 42, no. 6. p. 1650, 1995.
30. D.M. Fleetwood, S. L. Rosier, R. N. Nowlin, R. D. Schrimpf, R. A. Reber, Jr., M. DeLaus, P. S. Winokur, A. Wei, W. E. Combs, and R. L. Pease, "Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rates," IEEE Trans. Nucl. Sei., vol. 41, p. 1871, 1994.
31. W.L. Warren, M. R. Shaneyfelt, J. R. Schwank, D. M. Fleetwood, P. S. Winokur, R. A. B. Devine, W. P. Maszara, and J. B. McKitterick, "Paramagnetic defect centers in BESOI and SIMOX buried oxides," IEEE Trans. Nucl. Sei., vol. 41, p. 1755, 1993.
32. V.S. Pcrshcnkov, V. V. Bclyakov, S. V. Cherepko, A. Y. Nikiforov, V. N. Utiniov, and V. V. Emelianov, "Effect of electron traps on reversibility of annealing," IEEE 'Irans. Nucl. Sei., vol. 42, no. 6, p. 1750, 1995.
33. V.V. Belyakov, V. S. Pershenkov, A. V. Shalnov, and I. N. ShvetzovSilovsky, "Use of MOS structure for investigation of low-dose-rate effect in bipolar transistors," IEEE Trans. Nucl. Sei., vol. 42, no. 6, p. 1660, 1995.
34. S.L. Rosier, A. Wei, R. D. Schrimpf, D. M. Fleetwood, M. DeLaus, R. L. Pease, and W. E. Combs, "Physically based comparison of hotcarrier-induced and ionizing-radiation-induced degradation in BJT's," IEEE Trans. Electron Devices, vol. 42, p. 436, 1995.
35. A. Wei, S.L. Rosier, R. D. Schrimpf, D. M. Fleetwood, and W. E. Combs, "Dose-rate effects on bipolar junction transistor gain degradation," Appl. Phys. Lett., vol. 65, p. 1918, 1994.
36. S.L. Kosier, R. D. Schrimpf, R. N. Nowlin, D. M. Fleetwood, M. DeLaus, R. L. Pease, W. E. Combs, A. Wei, and F. Chai, "Charge separation for bipolar transistor," IEEE Trans. NucL Sei., vol. 40, p. 1276, 1993.
37. S.L. Rosier, W. E. Combs, A. Wei, R. D. Schrimpf, D. M. Fleetwood, M. DeLaus, and R. L. Pease, "Bounding the total dose response of modern bipolar transistors," IEEE Trans. Nucl. Sei., vol. 41, p. 1864, 1994.
38. M. DeLaus and W. Combs, "Total-dose and SEU results for the AD8001, a high-performance commercial op-amp fabricated in a dielectricallyisolated, complementary-bipolar process," in IEEE Radiation Effects Data Workshop Record, 1994, p. 104.
39. M.R. Shaneyfelt, D. M. Fleetwood, J. R. Schwank, T: L. Meisenheimer, and P. S. Winokur, "Effects of burn-in on radiation hardness," IEEE Trans. Nucl. Sei., vol. 41, p. 2550, 1994.
40. M.R. Shaneyfelt, P. S. Winokur, D. M. Fleetwood, J. R. Schwank, and R. A. Reber, Jr.. "Effects of reliability screens on MOS charge trapping," in KADECS, Arcachon, France, 1995.
41. F.W. Sexton, D. M. Fleetwood, C. C. Aldridge, G. Garrett, J. C. Pelletier, and J. I. Gaona, Jr., "Qualifying commercial IC's for space total-dose environments;" IEEE Trans. Nucl. 5'., vol. 39, p. 1869, 1992.
42. S.D. Clark, D. R. Alexander, R. L. Pease, J. P. Bings, M. C. Mäher, and M. Williams, "Plastic packaging and burn-in effects on ionizing dose response in CMOS microcircuits," IEEE Trans. Nucl. Sei., vol. 42, no. 6, p. 1607, 1995.
43. S. Dowling, "Comparative effect of gamma total dose on surface mount and non surface mount bipolar transistors," in Proc. RADECS, 1993, pp. 338 343.