Atomistic models of the Si(100)-SiO2 interface: Structural, electronic and dielectric properties

Journal of Physics Condensed Matter

Volumn 17, Issue 21, 2005, Pages

  Giustino, Feliciano ^b   Bongiorno, Angelo ^a   Pasquarello, Alfredo ^b  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

DATA ACQUISITION; DIELECTRIC PROPERTIES; ELECTRONIC PROPERTIES; MICROELECTRONICS; PERMITTIVITY; PROBABILITY DENSITY FUNCTION;

ATOMISTIC MODELS; DIELECTRIC PERMITTIVITY; INTERFACIAL TRANSITION LAYER; SI-BASED MICROELECTRONICS;

SILICA;

EID: 18744391944     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/17/21/003     Document Type: Article

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