Comparison of structurally relaxed models of the Si(001) -SiO 2 interface based on different crystalline oxide forms

Applied Surface Science

Volumn 104-105, Issue , 1996, Pages 317-322

  Pasquarello, Alfredo ^a,b   Hybertsen, Mark S ^b   Car, Roberto ^a,c  

^a INSTITUT ROMAND DE RECHERCHE NUMÉRIQUE EN PHYSIQUE DES MATÉRIAUX IRRMA   (Switzerland)

^b LUCENT TECHNOLOGIES   (United States)

^c UNIVERSITY OF GENEVA   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; INTERFACES (MATERIALS); MATHEMATICAL MODELS; OXIDES; SILICA;

SEMICONDUCTING SILICON;

EID: 0030233544     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(96)00164-X     Document Type: Article

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