Suboxides at the Si/SiO2 interface: A Si2p core level study with synchrotron radiation

Journal of Non-Crystalline Solids

Volumn 216, Issue , 1997, Pages 148-155

  Rochet, F ^a   Poncey, Ch ^a   Dufour, G ^a   Roulet, H ^a   Guillot, C ^b,c   Sirotti, F ^b  

^a SORBONNE UNIVERSITÉ   (France)

^b UNIVERSITÉ PARIS SACLAY   (France)

^c CEA SACLAY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; CRYSTAL ORIENTATION; ELECTRON ENERGY LEVELS; ELECTRON RESONANCE; EMISSION SPECTROSCOPY; MATHEMATICAL MODELS; PHOTONS; SILICA; SILICON; SUBSTRATES; SYNCHROTRON RADIATION; X RAY SPECTROSCOPY;

SUBOXIDE VERTICAL DISTRIBUTIONS; X RAY PHOTEMISSION SPECTROSCOPY (SRXPS);

INTERFACES (MATERIALS);

EID: 0031212955     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(97)00181-6     Document Type: Article

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