Understanding the limits of ultrathin SiO2 and Si-O-N gate dielectrics for sub-50 nm CMOS

Microelectronic Engineering

Volumn 48, Issue 1, 1999, Pages 25-30

  Green, M L ^a   Sorsch, T W ^a   Timp, G L ^a   Muller, D A ^a   Weir, B E ^a   Silverman, P J ^a   Moccio, S V ^a   Kim, Y O ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CMOS INTEGRATED CIRCUITS; ELECTRIC CONDUCTIVITY OF SOLIDS; ENERGY GAP; GATES (TRANSISTOR); LEAKAGE CURRENTS; PERMITTIVITY; SEMICONDUCTING BORON; SEMICONDUCTING SILICON COMPOUNDS; SILICA; ULTRATHIN FILMS;

GATE DIELECTRICS;

SEMICONDUCTING FILMS;

EID: 0033190130     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(99)00330-5     Document Type: Article

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