Transition structure at the Si(100)-SiO2 interface

Physical Review Letters

Volumn 90, Issue 18, 2003, Pages

  Bongiorno, Angelo ^a,b   Pasquarello, A ^a,b   Hybertsen, Mark S ^c   Feldman, L C ^d  

^a EPFL   (Switzerland)

^b INSTITUT ROMAND DE RECHERCHE NUMÉRIQUE EN PHYSIQUE DES MATÉRIAUX IRRMA   (Switzerland)

^c AGERE SYSTEMS   (United States)

^d VANDERBILT UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; MOLECULAR DYNAMICS; OXIDATION; OXYGEN; PROBABILITY DENSITY FUNCTION; SILICA; SILICON; TEMPERATURE;

CLASSICAL INTERATOMIC POTENTIALS; DENSITY-FUNCTIONAL RELAXATION METHODS; INVERSE ION SCATTERING; ION-SCATTERING SIMULATIONS; TRANSITION STRUCTURE;

INTERFACES (MATERIALS);

EID: 0037596665     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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