Strain profiling of HfO2/Si(001) interface with high-resolution Rutherford backscattering spectroscopy

Applied Physics Letters

Volumn 83, Issue 2, 2003, Pages 296-298

  Nakajima, K ^a   Joumori, S ^a   Suzuki, M ^a   Kimura, K ^a   Osipowicz, T ^b   Tok, K L ^b   Zheng, J Z ^c   See, A ^c   Zhang, B C ^c  

^a KYOTO UNIVERSITY   (Japan)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^c Chartd Semiconduct Mfg Ltd   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL LATTICES; MOSFET DEVICES; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING SILICON; STRAIN MEASUREMENT;

ATOMIC LAYER CHEMICAL VAPOR DEPOSITION;

SURFACE CHEMISTRY;

EID: 0042769327     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1592310     Document Type: Article

References (10)

1. H. Yamagishi, N. Koike, K. Imai, K. Yamabe, and T. Hattori, Jpn. J. Appl. Phys., Part 2 27, L1398 (1988).
2. J. E. Olsen and F. Shimura, Appl. Phys. Lett. 53, 1934 (1988).
3. Y. Sugita, S. Watanabe, N. Awaji, and S. Komiya, Appl. Surf. Sci. 100/ 101, 268 (1996).
4. E. P. Gusev, E. Cartier, D. A. Buchanan, M. Gribelyuk, M. Copel, H. Okorn-Schmidt, and C. D'Emic, Microelectron. Eng. 59, 341 (2001).
5. M. Gutowski, J. E. Jaffe, C.-L. Liu, M. Stoker, R. I. Hegde, R. S. Rai, and P. J. Tobin, Appl. Phys. Lett. 80, 1897 (2002).
6. K. Kimura, K. Ohshima, and M. Mannami, Appl. Phys. Lett. 64, 2232 (1994).
7. L. C. Feldman, P. J. Silverman, and J. S. Williams, Phys. Rev. Lett. 41, 1396 (1978).
8. W. Daum, H.-J. Krause, U. Reichel, and H. Ibach, Phys. Rev. Lett. 71, 1234 (1993).
9. N. V. Nguyen, D. Chandler-Horowitz, P. M. Amirtharai, and J. G. Pellegrino, Appl. Phys. Lett. 64, 2688 (1994).
10. Y. P. Kim, S. K. Choi, H. K. Kim, and D. W. Moon, Appl. Phys. Lett. 71, 3504 (1997).