Evidence of annealing effects on a high-density Si/SiO2 interfacial layer

Applied Physics Letters

Volumn 70, Issue 23, 1997, Pages 3119-3121

  Kosowsky, S D ^a   Pershan, P S ^a   Krisch, K S ^b   Bevk, J ^b   Green, M L ^b   Brasen, D ^b   Feldman, L C ^b,d   Roy, P K ^c  

^a HARVARD UNIVERSITY   (United States)

^b LUCENT TECHNOLOGIES   (United States)

^c NOKIA RESEARCH CENTER   (United States)

^d VANDERBILT UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000594285     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119090     Document Type: Article

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