Atomistic model structure of the Si(1 0 0)-SiO 2 interface from a synthesis of experimental data

Applied Surface Science

Volumn 234, Issue 1-4, 2004, Pages 190-196

  Bongiorno, Angelo ^a,b,c   Pasquarello, Alfredo ^a,b  

^a EPFL   (Switzerland)

^b INSTITUT ROMAND DE RECHERCHE NUMÉRIQUE EN PHYSIQUE DES MATÉRIAUX IRRMA   (Switzerland)

^c GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Channeling phenomena; Ion scattering

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DIMERS; IONS; LIGHT EMISSION; MATHEMATICAL MODELS; SILICA; SUBSTRATES; X RAY ANALYSIS;

BONDING PATTERNS; CHANNELING PHENOMENA; ION SCATTERING;

INTERFACES (MATERIALS);

EID: 3342966070     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.05.020     Document Type: Conference Paper

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