Interface structure between silicon and its oxide by first-principles molecular dynamics

Nature

Volumn 396, Issue 6706, 1998, Pages 58-60

  Pasquarello, Alfredo ^a,b,c   Hybertsen, Mark S ^c   Car, Roberto ^a,b  

^a INSTITUT ROMAND DE RECHERCHE NUMÉRIQUE EN PHYSIQUE DES MATÉRIAUX IRRMA   (Switzerland)

^b UNIVERSITY OF GENEVA   (Switzerland)

^c LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON;

ARTICLE; CRYSTAL; MATHEMATICAL MODEL; MOLECULAR DYNAMICS; OXIDATION; PRIORITY JOURNAL;

EID: 0032487957     PISSN: 00280836     EISSN: None     Source Type: Journal    
DOI: 10.1038/23908     Document Type: Article

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