Silicon crystal distortions at the Si(1 0 0)-SiO2 interface from analysis of ion-scattering

Microelectronic Engineering

Volumn 72, Issue 1-4, 2004, Pages 197-200

  Bongiorno, Angelo ^a,d   Pasquarello, Alfredo ^a   Hybertsen, Mark S ^b   Feldman, L C ^c  

^a EPFL   (Switzerland)

^b Och Spine at New York Presbyterian Hospitals   (United States)

^c VANDERBILT UNIVERSITY   (United States)

^d GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Channeling phenomena; Ion scattering; Si(1 0 0) SiO2 interface

Indexed keywords

AMORPHOUS SILICON; COMPUTER SIMULATION; DIMERS; DISLOCATIONS (CRYSTALS); OXIDATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICA;

CHANNELING PHENOMENA; ION-SCATTERING;

INTERFACES (MATERIALS);

EID: 1642634434     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2003.12.036     Document Type: Conference Paper

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