Characterization and production metrology of thin transistor gate oxide films

Materials Science in Semiconductor Processing

Volumn 2, Issue 2, 1999, Pages 103-147

  Diebold, Alain C ^a   Venables, David ^b   Chabal, Yves ^c   Muller, David ^c   Weldon, Marcus ^c   Garfunkel, Eric ^d  

^a SEMATECH   (United States)

^b NORTH CAROLINA STATE UNIVERSITY   (United States)

^c LUCENT TECHNOLOGIES   (United States)

^d RUTGERS UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GATES (TRANSISTOR); INTEGRATED CIRCUIT MANUFACTURE; INTERFACES (MATERIALS); MATHEMATICAL MODELS; PHONONS; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON COMPOUNDS; SILICA; SILICON WAFERS; THIN FILMS;

TRANSISTOR GATE DIELECTRICS;

DIELECTRIC FILMS;

EID: 0032669575     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(99)00009-8     Document Type: Review

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