Chemical structure of the ultrathin SiO2/Si(100) interface:An angle-resolved Si 2p photoemission study

Physical Review B - Condensed Matter and Materials Physics

Volumn 63, Issue 20, 2001, Pages

  Oh, J H ^a   Yeom, H W ^b   Hagimoto, Y ^a   Ono, K ^a   Oshima, M ^a   Hirashita, N ^c   Nywa, M ^c   Toriumi, A ^c   Kakizaki, A ^d  

^a UNIVERSITY OF TOKYO   (Japan)

^b Yonsei University   (South Korea)

^c STARC   (Japan)

^d INSTITUTE OF MATERIALS STRUCTURE SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON; SILICON DIOXIDE;

ARTICLE; CHEMICAL STRUCTURE; ELECTRON; OXIDATION; PHOTON; QUANTITATIVE ASSAY;

EID: 0034894442     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.63.205310     Document Type: Article

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