Structurally relaxed models of the Si(001)-SiO2 interface

Applied Physics Letters

Volumn 68, Issue 5, 1996, Pages 625-627

  Pasquarello, Alfredo ^a,b   Hybertsen, Mark S ^b   Car, Roberto ^a,c  

^a INSTITUT ROMAND DE RECHERCHE NUMÉRIQUE EN PHYSIQUE DES MATÉRIAUX IRRMA   (Switzerland)

^b LUCENT TECHNOLOGIES   (United States)

^c UNIVERSITY OF GENEVA   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000551110     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116489     Document Type: Article

References (11)

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