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Volumn 69, Issue 2-4, 2003, Pages 195-207

Long-wavelength nitride lasers on GaAs

Author keywords

Edge emitting lasers; Nitride lasers; Vertical cavity surface emitting lasers (VCSELs)

Indexed keywords

DATA COMMUNICATION SYSTEMS; NITRIDES; OPTICAL FIBERS; SEMICONDUCTING GALLIUM ARSENIDE; STRUCTURE (COMPOSITION);

EID: 0141635172     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(03)00297-1     Document Type: Conference Paper
Times cited : (13)

References (62)
  • 19
    • 0141604411 scopus 로고    scopus 로고
    • Napa Valley, CA, USA, June 4-5
    • Fischer M., Reinhardt M., Forschel A. Electron. Lett. 36:2000;1208. Also in Symposium on 'LongWave on GaAs', Napa Valley, CA, USA, June 4-5, 2002.
    • (2002) LongWave on GaAs
  • 33
    • 0141716093 scopus 로고    scopus 로고
    • Our calculations, unpublished (2002)
    • Our calculations, unpublished (2002).
  • 56
    • 0141716086 scopus 로고    scopus 로고
    • 2 at λ=1210 nm (cw, RT)
    • 2 at λ=1210 nm (cw, RT).
  • 59
    • 0035654050 scopus 로고    scopus 로고
    • IEEE
    • Yamada M. LEOS 2001. IEEE. 2:2001;598-599.
    • (2001) LEOS 2001 , vol.2 , pp. 598-599
    • Yamada, M.1
  • 60
    • 0035651047 scopus 로고    scopus 로고
    • IEEE
    • Klem J.F. LEOS 2001. IEEE. 2:2001;596-597.
    • (2001) LEOS 2001 , vol.2 , pp. 596-597
    • Klem, J.F.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.