VCSEL transmitters for 10-Gigabit Ethernet: 1.3 μm wavelength VCSELs for metropolitan area networks and TO-packaged 850 nm wavelength VCSELs for data transmission over multimode fibers and optical backplane waveguides

Proceedings - Electronic Components and Technology Conference

Volumn , Issue , 2002, Pages 5-11

  Mederer, Felix ^a   Ecker, I ^a   Michalzik, R ^a   Steinle, G ^a   Riechert, H ^a   Ebeling, K J ^a   Lunitz, B ^a   Moisel, J ^a   Wiedenmann, D ^a  

^a UNIVERSITY OF ULM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATTENUATION; BANDWIDTH; BIT ERROR RATE; DATA COMMUNICATION EQUIPMENT; METROPOLITAN AREA NETWORKS; MOLECULAR BEAM EPITAXY; MULTIMODE FIBERS; OPTICAL INTERCONNECTS; OPTICAL WAVEGUIDES; PHOTODIODES; PRINTED CIRCUIT BOARDS; QUANTUM WELL LASERS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

OPTICAL TRANSMITTERS;

TRANSMITTERS;

EID: 0036287413     PISSN: 05695503     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)

1. The status of the 10-gigabit ethernet standard
2. Surface-emitting laser - Its birth and generation of new optoelectronics field
3. High-speed high-temperature operation of vertical-cavity surface-emitting lasers
4. Heterogeneous integration of OE array with Si electronics and micro-optics
5. Room temperature continuous wave InGaAsN quantum well vertical-cavity lasers emitting at 1.3 μm
6. First CW operation of 1.26 μm electrically pumped MOCVD grown InGaAsN/GaAs VCSEL
7. 12.5 Gbit/s data rate fiber transmission using single-mode selectively oxidized GaAs VCSELs at λ = 850 nm
8. VCSEL electrical packaging analysis and design guidelines for multi-GHz applications
9. Self-aligned coupling of optical transmitter and receiver modules to board-integrated optical multimode waveguides
10. Optical backplanes with integrated polymer waveguides
11. Physical reasons for optical interconnection
12. Monolithic VCSEL with InGaAsN active region emitting at 1.28 μm and CW output power exceeding 500 μW at room temperature