1200nm GaAs-based vertical cavity lasers employing GaInNAs multiquantum well active regions

Electronics Letters

Volumn 36, Issue 11, 2000, Pages 951-952

  Coldren, C W ^a,b   Larson, M C ^b   Spruytte, S G ^a   Harris, J S ^a  

^a STANFORD UNIVERSITY   (United States)

^b LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001018053     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20000365     Document Type: Article

References (3)

1. NAKAHARA, K., KONDOW, M., KITATANI, T., LARSON, M.C., and UOMI, K.: '1.3-μm continuous-wave lasing operation in GaInNAs quantum-well lasers', IEEE Photonics Technol. Lett., 1998, 10, (4), pp. 487-488
2. SATO, S., OSAWA, Y., SAITOH, T., and FUJIMURA, I.: 'Room temperature pulsed operation of 1.3μm GaInNAs/GaAs laser diode', Electron. Lett., 1997, 33, (16), pp. 1386-1387
3. LARSON, M.C., KONDOW, M., KITATANI, T., NAKAHARA, K., TAMURA, K., INOUE, H., and UOMI, K.: 'GaInNAs-GaAs long-wavelength vertical-cavity surface-emitting laser diodes', IEEE Photonics Technol. Lett., 1998, 10, (2), pp. 188-190