InAs-InGaAs quantum dot VCSELs on GaAs substrates emitting at 1.3 μm

Electronics Letters

Volumn 36, Issue 16, 2000, Pages 1384-1385

  Lott, J A ^a   Ledentsov, N N ^b,c   Ustinov, V M ^b   Maleev, N A ^b   Zhukov, A E ^b   Kovsh, A R ^b   Maximov, M V ^b   Volovik, B V ^b   Alferov, Zh I ^b   Bimberg, D ^c  

^a AIR FORCE INSTITUTE OF TECHNOLOGY   (United States)

^b IOFFE INSTITUTE   (Russian Federation)

^c TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

GROUND STATE; MIRRORS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS; SUBSTRATES;

INDIUM ARSENIDE; VERTICAL CAVITY SURFACE EMITTING LASERS (VCSEL);

SEMICONDUCTOR LASERS;

EID: 6744224432     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20000988     Document Type: Article

References (14)

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