Room-temperature pulsed operation of 1.3μm GaInNAs/GaAs laser diode

Electronics Letters

Volumn 33, Issue 16, 1997, Pages 1386-1387

  Sato, S ^a   Osawa, Y ^a   Saitoh, T ^a   Fujimura, I ^a  

^a RICOH COMPANY LTD   (Japan)

Author keywords

Chemical vapour deposition; Semiconductor junction lasers

Indexed keywords

CHEMICAL VAPOR DEPOSITION; HETEROJUNCTIONS; NITROGEN COMPOUNDS; PERFORMANCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

CONTINUOUS WAVE OPERATION; EMISSION SPECTRA; ROOM TEMPERATURE;

SEMICONDUCTOR LASERS;

EID: 0031190535     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19970935     Document Type: Article

References (3)

1. KONDOW, M., UOMI, K., NIWA, A., KITATANI, T., WATAHIKI, S., and YAZAWA, Y.: 'GaInNAs: a novel material for long-wavelength-range laser diodes with excellent high-temperature performance', Jpn. J. Appl. Phys., 1996, 35, pp. 1273-1275
2. KONDOW, M., NAKATSUKA, S., KITATANI. T., YAZAWA, Y., and OKAI, M.: 'Room-temperature continuous-wave operation of GaInNAs/GaAs laser diode', Electron. Lett., 1996, 32, (24), pp. 2244-2245
3. SATO, S., OSAWA, Y., and SAITOH, T.: 'Room-temperature operation of GaInNAs/GaInP double-heterostructure laser diodes grown by metalorganic chemical vapor deposition', Jpn. J. Appl. Phys., 1997, 36, pp. 2671-2675