Incorporation of nitrogen in GaAsN and InGaAsN alloys investigated by FTIR and NRA

Physica B: Condensed Matter

Volumn 308-310, Issue , 2001, Pages 877-880

  Alt, H Ch ^a   Egorov, A Yu ^b   Riechert, H ^b   Meyer, J D ^c   Wiedemann, B ^c  

^a MUNICH UNIVERSITY OF APPLIED SCIENCES   (Germany)

^b INFINEON TECHNOLOGIES AG   (Germany)

^c GOETHE UNIVERSITY   (Germany)

Author keywords

FTIR; InGaAsN; Nitrogen; NRA

Indexed keywords

ANNEALING; INFRARED SPECTROSCOPY; MOLECULAR BEAM EPITAXY; NITROGEN; PRECIPITATION (CHEMICAL);

NUCLEAR REACTION ANALYSIS (NRA);

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 0035675061     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(01)00932-2     Document Type: Article

References (24)