GaAs/AlGaAs buried-heterostructure vertical-cavity surface-emitting laser with semi-insulating GaInP:Fe regrowth

Electronics Letters

Volumn 36, Issue 18, 2000, Pages 1542-1544

  Angulo Barrios, C ^a   Rodriguez Messmer E ^a   Risberg, A ^c   Carlsson, C ^b   Halonen, J ^b   Ghisoni, M ^c   Larsson, A ^b   Lourdudoss, S ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^c Box 520   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; HETEROJUNCTIONS; OPTICAL RESOLVING POWER; QUANTUM EFFICIENCY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; THRESHOLD VOLTAGE; VAPOR PHASE EPITAXY;

HYDRIDE VAPOR PHASE EPITAXY (HVPE); VERTICAL-CAVITY SURFACE-EMITTING LASERS (VCSEL);

SEMICONDUCTOR LASERS;

EID: 0003307207     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20001082     Document Type: Article

References (6)

1. IGA, K., KOVAMA, F., and KINOSHITA, S.: 'Surface emitting semiconductor lasers', IEEE J. Quantum Electron., 1988, 24, pp. 1845-1855
2. CHANG-HASNAlN, C.J., WU, Y.-A., LI, G.S., HASNAIN, G., CHOQUETTE, KD., CANEAU, C., and FLOREZ, L.T.: 'Low threshold buried heterostructure vertical cavity surface-emitting laser'. Conf. Lasers and Electro-Optics, Tech. Dig. Ser., 1993, Vol. 11, pp. 136-138
3. YOO, B.-S., CHU, H.Y., PARK, H.-H., LEE, H.G., and LEE, J.: 'Transverse mode characteristics of vertical-cavity surface-emitting lasers buried in amorphous GaAs antiguide layer', IEEE J. Quantum Electron., 1997, 33, pp. 1794-1800
4. LOURDUDOSS, S., HOLZ, R., KJEBON, O., and LANDGREN, G.: 'Tron doped GaInP for selective regrowth around GaAs mesas', J. Crystal Growth, 1995, 154, pp. 410-414
5. ANGULO BARRIOS, C., RODRIGUEZ MESSMER, E., HOLMGREN, M., and LOURDUDOSS, S.: 'Semi-insulating GaInP:Fe and GaAs:Fe regrowth around GaAs/AlGaAs laser mesas'. 3rd Int. Conf. Materials for Microelectronics, Dublin, Ireland, 2000
6. GAARDER, A., ANGULO BARRIOS, C., RODRIGUEZ MESSMER, E., LOURDUDOSS, S., and MARCINKEVICIUS, S.: 'Dopant distribution in selectively regrown lnP:Fe and InGaP:Fe studied by time-resolved photoluminescence'. 12th Int. Conf. InP and Related Materials, Williamsburg, USA, 2000