Photopumped lasing at 1.25 μm of GaInNAs-GaAs multiple-quantum-well vertical-cavity surface-emitting lasers

IEEE Photonics Technology Letters

Volumn 9, Issue 12, 1997, Pages 1549-1551

  Larson, M C ^b   Kondow, M ^b   Kitatani, T ^b   Tamura, K ^b   Yazawa, Y ^b   Okai, M ^a,b  

^a IEEE

^b HITACHI LTD   (Japan)

Author keywords

Long wavelength; Optical communications; Semiconductor lasers; Vertical cavity surface emitting lasers (VCSEL's)

Indexed keywords

CONTINUOUS WAVE LASERS; CURRENT DENSITY; MIRRORS; OPTICAL COMMUNICATION EQUIPMENT; OPTICALLY PUMPED LASERS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

DISTRIBUTED BRAGG REFLECTOR (DBR); VERTICAL CAVITY SURFACE EMITTING LASERS (VCSEL);

QUANTUM WELL LASERS;

EID: 0031380637     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.643256     Document Type: Article

References (12)

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