Photoluminescence and lasing characteristics of GaInNAs quantum wells using GaInAs intermediate layers

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 2 B, 2002, Pages 1034-1039

  Kawaguchi, Masao ^a   Miyamoto, Tomoyuki ^a   Gouardes, Eric ^a,b   Minobe, Shugo ^a   Kondo, Takashi ^a   Koyama, Fumio ^a   Iga, Kenichi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b OPTO+   (France)

Author keywords

GaInAs IML; GaInNAs; Laser; MOCVD; QW

Indexed keywords

COMPOSITION; INTERFACES (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITROGEN; PHOTOLUMINESCENCE; QUANTUM WELL LASERS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; THERMAL EFFECTS;

HETEROINTERFACES; LASING CHARACTERISTICS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0036478769     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.1034     Document Type: Conference Paper

References (30)