Design and characteristics of high-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 5, Issue 3, 1999, Pages 561-573

  Kuznetsov, Mark ^a,b,e   Hakimi, Farhad ^a,b,f   Sprague, Robert ^a,c,g   Mooradian, A ^a,d  

^a Micracor Inc   (United States)

^b MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^c Barr Associates Inc   (United States)

^d Novalux Inc   (United States)

^e OHIO STATE UNIVERSITY   (United States)

^f CHARLES STARK DRAPER LABORATORY   (United States)

^g UNIVERSITY OF ARIZONA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; HIGH POWER LASERS; LASER BEAMS; OPTICAL PUMPING; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SINGLE MODE FIBERS; TRANSMISSION ELECTRON MICROSCOPY;

OPTICALLY PUMPED SEMICONDUCTOR; POWER LASERS; STRAIN COMPENSATION; VERTICAL EXTERNAL CAVITY SURFACE EMITTING LASERS;

QUANTUM WELL LASERS;

EID: 0033124033     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.788419     Document Type: Article

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