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Volumn 14, Issue 2, 2002, Pages 131-133

Optimization of an optically pumped 1.3-μm GaInNAs vertical-cavity surface-emitting laser

(3) Calvez, Stephane b Burns, David b Dawson, Martin D a,b

a IEEE

b UNIVERSITY OF STRATHCLYDE (United Kingdom)

Author keywords

Bragg mirrors; GaInNAs; Long wavelength; Mirror; Optical communications; Semiconductor device modeling; Vertical cavity surface emitting lasers

Indexed keywords

CAVITY RESONATORS; MATHEMATICAL MODELS; MIRRORS; OPTICAL COMMUNICATION; OPTICAL PUMPING; OPTIMIZATION; SEMICONDUCTING GALLIUM COMPOUNDS; SUBSTRATES;

BRAGG MIRRORS; DOUBLE BAND MIRROR; DOUBLE PASS PUMPING; GALLIUM INDIUM NITROGEN ARSENIDE; LONG WAVELENGTH MIRROR; SEMICONDUCTOR DEVICE MODELLING; VERTICAL CAVITY SURFACE EMITTING LASERS;

OPTICALLY PUMPED LASERS;

EID: 0036477674 PISSN: 10411135 EISSN: None Source Type: Journal
DOI: 10.1109/68.980462 Document Type: Article

Times cited : (35)

References (15)

1
- 0031153819
- GaInNAs: Novel material for long-wavelength semiconductor lasers
- (1997) IEEE J. Select. Topics in Quantum Electron. , vol.3 , pp. 719-730
- Kondow, M.¹ Kitatani, T.² Nakatsuka, S.³ Larson, M.C.⁴ Nakahara, K.⁵ Yazawa, Y.⁶ Okai, M.⁷ Uomi, K.⁸

2
- 0035132379
- Monolithic VCSEL with InGaAsN active region emitting at 1.28 μm and CW output power exceeding 500 μW at room temperature
- (2001) Electron. Lett. , vol.37 , pp. 93-95
- Steinle, G.¹ Riechert, H.² Egorov, A.Y.³

3
- 0034314540
- Continuous wave operation of 1.26 μm GaInNAs/GaAs vertical-cavity surface-emitting lasers grown by metalorganic chemical vapor deposition
- (2000) Electron. Lett. , vol.36 , pp. 2018-2019
- Sato, S.¹ Nishiyama, N.² Takahashi, T.³ Jikutani, N.⁴ Matsutani, M.A.A.⁵ Koyama, F.⁶ Iga, K.⁷

4
- 0035868165
- OC-48 capable InGaAsN vertical cavity lasers
- (2001) Electron. Lett. , vol.37 , pp. 355-356
- Jackson, A.W.¹ Naone, R.L.² Dalberth, M.J.³ Smith, J.M.⁴ Malone, K.J.⁵ Kisker, D.W.⁶ Klem, J.F.⁷ Choquette, K.D.⁸ Serkland, D.K.⁹ Geib, K.M.¹⁰

5
- 0033124033
- 00 beams
- May/June
- (1999) IEEE J. Select. Topics in Quantum Electron. , vol.5 , pp. 561-573
- Kuznetzov, M.¹ Hakimi, F.² Sprague, R.³ Mooredian, A.⁴

6
- 0033340283
- Actively stabilized single-frequency vertical-external-cavity AlGaAs laser
- Nov.
- (1999) IEEE Photon. Technol. Lett. , vol.11 , pp. 1551-1553
- Holm, M.A.¹ Burns, D.² Ferguson, A.I.³ Dawson, M.D.⁴

7
- 0032688595
- 2 mW CW singlemode operation of a tunable 1550 nm vertical cavity surface emitting laser with 50 nm tuning range
- (1999) Electron. Lett. , vol.35 , pp. 900-901
- Vakhshoori, D.¹ Tayebati, P.² Azimi, C.-C.L.M.³ Wang, P.⁴ Zhou, J.-H.⁵ Canoglu, E.⁶

8
- 0345440151
- Ultrafast (GaIn)(NA's)/GaAs vertical-cavity surface-emitig laser for the 1.3 μm wavelength regime
- (1999) Appl. Phys. Lett. , vol.74 , pp. 2271-2273
- Ellmers, C.¹ Hohnsdorf, F.² Koch, J.³ Agert, C.⁴ Leu, S.⁵ Karaiskaj, D.⁶ Hofmann, M.⁷ Stolz, W.⁸ Ruhle, W.W.⁹

9
- 0026219059
- Analysis of vertical surface emitting semiconductor lasers
- (1991) Frequenz , vol.45 , pp. 207-212
- Ebeling, K.J.¹ Hackbarth, T.²

10
- 0031109231
- Vertical-cavity surface-emitting lasers with low-ripple optical pumping windows
- Apr.
- (1997) IEEE J. Select. Topics in Quantum Electron. , vol.3 , pp. 366-371
- Knopp, K.J.¹ Christensen, D.H.² Hill, J.R.³

11
- 0035821960
- Picosecond surface-emitting semiconductor laser with > 200 mW average power
- June
- (2001) Electron. Lett. , vol.37 , pp. 766-767
- Haring, R.¹ Paschotta, R.² Gini, E.³ Morier-Genoud, F.⁴ Melchior, H.⁵ Keller, U.⁶ Martin, D.⁷

12
- 0009090365
- Optically pumped lasing at 1.3 μm of GaInNaAs-based VCSEL's structures
- Springer Proceedings in Physics, Osaka
- (2000) Proc. of 25th International Conf. on Physics and Semiconductors , vol.87 , pp. 693-694
- Hetterich, M.¹ Dawson, M.D.² Egorov, A.Y.³ Riechert, H.⁴

13
- 0034313209
- Long-wavelength vertical-cavity lasers and amplifiers
- Nov./Dec.
- (2000) IEEE J. Select. Topics in Quantum Electron. , vol.6 , pp. 1244-1253
- Karim, A.¹ Bjolin, S.² Piprek, J.³ Bowers, J.E.⁴

14
- 0027682372
- Dual-wavelength Bragg reflectors using GaAs/AlAs multilayers
- Oct.
- (1993) Electron. Lett. , vol.29 , pp. 1980-1982
- Lee, C.P.¹ Tsai, C.M.² Tsang, J.S.³

15
- 0009091237
- Double-band mirrors and their application for vertical-cavity devices
- submitted for publication
- IEEE J. Quantum Electron.
- Calvez, S.¹ Burns, D.² Dawson, M.D.³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.