Low-threshold operation of 1.3-μm GaAsSb quantum-well lasers directly grown on GaAs substrates

IEEE Photonics Technology Letters

Volumn 12, Issue 7, 2000, Pages 774-776

  Yamada, Mitsuki ^b   Anan, Takayoshi ^b   Tokutome, Keiichi ^a   Kamei, Akio ^a   Nishi, Kenichi ^b   Sugou, Shigeo ^b  

^a NEC CORPORATION   (Japan)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; OPTIMIZATION; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; SUBSTRATES;

EDGE EMITTING LASERS; GALLIUM ARSENIDE ANTIMONIDE; VERTICAL CAVITY SURFACE EMITTING LASERS;

QUANTUM WELL LASERS;

EID: 0034225043     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.853496     Document Type: Article

References (11)

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