High-performance 1.3-μ m VCSELs with GaAsSb/GaAs quantum wells

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

Volumn 2, Issue , 2001, Pages 598-599

  Yamada, M ^a   Anan, T ^a   Kurihara, K ^a   Nishi, K ^a   Tokutome, K ^a   Kamer, A ^a   Sugou, S ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; CURRENT VOLTAGE CHARACTERISTICS; LASER MODES; LIGHT EMISSION; LIGHT MODULATION; METALLORGANIC VAPOR PHASE EPITAXY; MIRRORS; OPTICAL FIBER FABRICATION; OPTICAL FIBERS; OPTICAL SYSTEMS; REACTIVE ION ETCHING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

DISTRIBUTED BRAGG REFLECTORS (DBR); VERTICAL CAVITY SURFACE EMITTING LASERS (VCSEL);

QUANTUM WELL LASERS;

EID: 0035654050     PISSN: 10928081     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)