8 W continuous wave operation of InGaAsN lasers at 1.3 μm

Electronics Letters

Volumn 36, Issue 16, 2000, Pages 1381-1382

  Livshits, D A ^a   Egorov, A Yu ^a,b   Riechert, H ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; CURRENT DENSITY; SEMICONDUCTING INDIUM COMPOUNDS;

INDIUM GALLIUM ARSENIC NITRIDE;

QUANTUM WELL LASERS;

EID: 0034246186     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20000966     Document Type: Article

References (6)

1. KONDOW, M., UOMI, K., NIWA, A., KITATANI, T., WATAHIKI, S., and YAZAWA, Y.: 'GaInAs: a novel material for long-wavelength-range laser diodes with excellent high-temperature perfomance', Jpn. J. Appl. Phys., 1996, 35, pp. 1273-1275
2. EGOROV, A.YU., BERNKLAU, D., LIVSHITS, D., USTINOV, V., ALFEROV, ZH.I., and RIECHERT, H.: 'High power CW operation of InGaAsN lasers at 1.3μm. Electron. Lett., 1999, 35, pp. 1643-1644
3. BORCHERT, B., EGOROV, A.YU., ILLEK, S., KOMAINDA, M., and RIECHERT, H.: '1.29μm GaInNAs multiple quantum well (MQW) ridge-waveguide (RWG) laser diodes with improved performance', Electron. Lett., 1999, 35, pp. 2204-2206
4. NAKAHARA, K., KONDOW, M., KITATANI, T., LARSON, M.C., and UOMI, K.: '1.3μm continuous wave lasing operation in GaInNAs quantum well lasers', IEEE Photonics Technol. Lett., 1998, 10, (4), pp. 487-488
5. HÖHNSDORF, F., KOCH, J., LEU, S., STOLZ, W., BORCHERT, B., and DRUMINSKI, M.: 'Reduced threshold current densities of GaInNAs/ GaAs single quantum well lasers for emission wavelengths in the range 1.28-1.38μm', Electron. Lett., 1999, 35, (7), pp. 571-572
6. GARBUZOV, D., MAIOROV, M., KHALFIN, V., HARVEY, M., ALMUHANNA, A., MAWST, L., BOTEZ, D., and CONNOLLY, J.: 'Super high power operation of 0.98mkm InGaAs(P)/InGaP/GaAs broadened waveguide separate confinement heterostructure quantum well diode lasers'. SPIE Photonics West Conference '99, San Jose, CA, 1999, Paper 3625-93