GaInAsN/GaAs laser diodes operating at 1.52 μm

Electronics Letters

Volumn 36, Issue 14, 2000, Pages 1208-1209

  Fischer, M ^a   Reinhardt, M ^b   Forchel, A ^a  

^a UNIVERSITY OF WÜRZBURG   (Germany)

^b NANOPLUS NANOSYSTEMS AND TECHNOLOGIES GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

LASER PULSES; LIGHT EMISSION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH;

DOUBLE QUANTUM WELL (DQW) LASERS; SOLID SOURCE MOLECULAR BEAM EPITAXY (MBE);

QUANTUM WELL LASERS;

EID: 0033691854     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20000870     Document Type: Article

References (8)

1. KONDOW, M., UOMI, K., NIWA, A., KITATANI, T., WATAHIKI, S., and YAZAWA, Y.: 'GaInNAs: A novel material for long-wavelength-range laser diodes with excellent high-temperature performance', Jpn. J. Appl. Phys., 1996, 35, pp. 1273-1275
2. KONDOW, M., KITATANI, T., NAKATSUKA, S., LARSON, M., NAKAHARA, K., YAZAWA, Y., OKAI, M., and UOMI, K.: 'GaInNAs: A novel material for long-wavelength semiconductor lasers', IEEE J. Sel. Topics Quantum Electron., 1997, 3, pp. 719-730
3. SATO, S., and SATOH, S.: 'High-temperature characteristic in 1.3μm-range highly strained GaInNAs ridge stripe lasers grown by metal-organic chemical vapor deposition', IEEE Photonics Technol. Lett., 1999, 11, pp. 1560-1562
4. NAKAHARA, K., KONDOW, M., KITATANI, T., LARSON, M., and UOMI, K.: '1.3μm continuous-wave lasing operation in GaInNAs quantum-well lasers', IEEE Photonics Technol. Lett., 1998, 10, pp. 487-488
5. REINHARDT, M., FISCHER, M., KAMP, M., HOFMANN, J., and FORCHEL, A.: '1.3μm GaInNAs-AlGaAs distributed feedback lasers', IEEE Photonics Technol. Lett., 2000, 12, pp. 239-241
6. EGOROV, A., BERNKLAU, D., LIVSHITS, D., USTINOV, V., ALFEROV, Z., and RIECHERT, H.: 'High power CW operation of InGaAsN lasers at 1.3μm', Electron. Lett., 1999, 35, pp. 1643-1644
7. SATO, S., and SATOH, S.: '1.3μm continuous-wave operation of GaInNAs lasers grown by metal organic chemical vapour deposition', Electron. Lett., 1999, 35, pp. 1251-1252
8. HÖHNSDORF, F., KOCH, J., LEU, S., STOLZ, W., BORCHERT, B., and DRUMINSKI, M.: 'Reduced threshold current densities of (GaIn)(NAs)/GaAs single quantum well lasers for emission wavelengths in the range 1.28-1.38μm', Electron. Lett., 1999, 35, pp. 571-572