Continuous-wave operation of long-wavelength quantum-dot diode laser on a GaAs substrate

IEEE Photonics Technology Letters

Volumn 11, Issue 11, 1999, Pages 1345-1347

  Zhukov, A E ^a   Kovsh, A R ^a   Ustinov, V M ^a   Shernyakov, Yu M ^a   Mikhrin, S S ^a   Maleev, N A ^a   Kondrat'eva, E Yu ^a   Livshits, D A ^a   Maximov, M V ^a   Volovik, B V ^a   Bedarev, D A ^a   Musikhin, Yu G ^a   Ledentsov, N N ^a   Kop'ev, P S ^a   Alferov, Zh I ^a   Bimberg, D ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; CURRENT DENSITY; EPITAXIAL GROWTH; HIGH POWER LASERS; SEMICONDUCTING FILMS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS; SUBSTRATES;

INDIUM ARSENIDE; QUANTUM DOT LASERS;

SEMICONDUCTOR LASERS;

EID: 0033221567     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.803040     Document Type: Article

References (11)

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