7.8 GHz small-signal modulation bandwidth of 1.3 μm DQW GaInAsN/GaAs laser diodes

Electronics Letters

Volumn 36, Issue 12, 2000, Pages 1025-1026

  Reinhardt, M ^a,b   Fischer, M ^a   Kamp, M ^a   Forchel, A ^a  

^a UNIVERSITY OF WÜRZBURG   (Germany)

^b NANOPLUS NANOSYSTEMS AND TECHNOLOGIES GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; CONTINUOUS WAVE LASERS; LIGHT MODULATION; OPTICAL WAVEGUIDES; SEMICONDUCTING GALLIUM ARSENIDE;

DOUBLE QUANTUM WELL (DQW) LASER DIODES;

QUANTUM WELL LASERS;

EID: 0033686985     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20000793     Document Type: Article

References (6)

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2. NAKAHARA, K., KONDOW, M., KITATANI, T., LARSON, M., and UOMI, K.: '1.3-μm continuous-wave lasing operation in GaInNAs quantum-well lasers', IEEE Photonics Technol. Lett., 1998, 10, pp. 487-488
3. SATO, S., and SATOH, S.: '1.3μm continuous-wave operation of GaInNAs lasers grown by metal organic chemical vapour deposition', Electron. Lett., 1999, 35, pp. 1251-1252
4. EGOROV, A., BERNKLAU, D., LIVSHITS, D., USTINOV, V., ALFEROV, Z., and RIECHERT, H.: 'High power CW operation on InGaAsN lasers at 1.3μm', Electron. Lett., 1999, 35, pp. 1643-1644
5. REINHARDT, M., FISCHER, M., KAMP, M., and FORCHEL, A.: '1.3μm GaInNAs/AlGaAs distributed feedback lasers', IEEE Photonics Technol. Lett., 2000, 12, (3), pp. 239-241
6. OLHANSKY, R., HIEL, P., LANZISERA, V., and POWAZINIK, W.: 'Frequency response of 1.3μm InGaAsP high speed semiconductor lasers', IEEE J. Quantum Electron., 1987, 23, pp. 1410-1418