Growth of highly strained GaInAs/GaAs quantum wells for 1.2 μm wavelength lasers

Journal of Crystal Growth

Volumn 209, Issue 1, 2000, Pages 27-36

  Schlenker, D ^a   Miyamoto, T ^a   Chen, Z ^a   Koyama, F ^a   Iga, K ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; STRAIN; TRANSMISSION ELECTRON MICROSCOPY;

FULL WIDTH AT HALF MAXIMUM (FWHM);

QUANTUM WELL LASERS;

EID: 0033906273     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00524-2     Document Type: Article

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